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* 9.5A, 200V, RDS(on) = 0.36Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 40.5 pF) Fast switching 100% avalanche tes.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, pro.

P10N60

P10N60C

P10N60CA

P10N60CAFJ

P10NB20FP

P10NB50FP

P10NK60Z

P10NK60ZFP

P10NK70Z

P10NK80Z

P10NK80ZFP

P100

P1000A