P10N60C Datasheet | Fairchild Semiconductor

FQP10N60C / FQPF10N60C 600V N-Channel MOSFET FQP10N60C / FQPF10N60C 600V N-Channel MOSFET April 2007 QFET ® Features - 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V - Low gate charge ( typical 44 nC) - Low Crss ( typical 18 pF) - Fast switching - 100% avalanche tested - Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency...