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P10N60C - FQP10N60C

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V.
  • Low gate charge ( typical 44 nC).
  • Low Crss ( typical 18 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FQP10N60C / FQPF10N60C 600V N-Channel MOSFET FQP10N60C / FQPF10N60C 600V N-Channel MOSFET April 2007 QFET ® Features • 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V • Low gate charge ( typical 44 nC) • Low Crss ( typical 18 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.