P10N60C Overview
Key Specifications
Package: TO-220AB
Mount Type: Through Hole
Pins: 3
Height: 8.79 mm
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V
- Low gate charge ( typical 44 nC)
- Low Crss ( typical 18 pF)
- Fast switching
- 100% avalanche tested
