P10N60C Key Features
- 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V
- Low gate charge ( typical 44 nC)
- Low Crss ( typical 18 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Part: P10N60C
- Description: FQP10N60C
- Manufacturer: Fairchild Semiconductor
- Size: 0.99 MB
Other P10N60C Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Silan Microelectronics |
P10N60CA | 600V N-CHANNEL MOSFET |
|
Silan Microelectronics |
P10N60CAFJ | 600V N-CHANNEL MOSFET |
Infineon Technologies Corporation |
P10N60 | SGP10N60 |