P2N80 Datasheet FQP2N80

Manufacturer: Fairchild (now onsemi)

P2N80 fqp2n80 by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	P2N80
Manufacturer	Fairchild (now onsemi)
File Size	454.80 KB
Description	FQP2N80
Download	P2N80 Download (PDF)

General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.

These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Overview

FQP2N80 — N-Channel QFET® MOSFET November 2013 FQP2N80 N-Channel QFET® MOSFET 800 V, 2.4 A, 6.

Key Features

2.4 A, 800 V, RDS(on) = 6.3 Ω (Max. ) @ VGS = 10 V, ID = 1.2 A.
Low Gate Charge (Typ. 12 nC).
Low Crss (Typ. 5.5 pF).
100% Avalanche Tested D GD S G TO-220 S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQP2N80 800 2.4 1.52 9.6 ± 30 (Note 2) (Note 1) (Note.

📁 Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	P2N80	Power MOSFET	VBsemi

More Datasheets from Fairchild (now onsemi)

Part Number	Description