P2N80 Datasheet - Fairchild Semiconductor

FQP2N80

P2N80 Features

* 2.4 A, 800 V, RDS(on) = 6.3 Ω (Max.) @ VGS = 10 V, ID = 1.2 A

* Low Gate Charge (Typ. 12 nC)

* Low Crss (Typ. 5.5 pF)

* 100% Avalanche Tested D GD S G TO-220 S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless o

P2N80 General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

P2N80 Datasheet (454.80 KB)

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Part number:

P2N80

Manufacturer:

Fairchild Semiconductor

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454.80 KB

Description:

fqp2n80.

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P2N80 FQP2N80 Fairchild Semiconductor

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P2N80 Features

P2N80 General Description

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