Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
Features
- 2.4 A, 800 V, RDS(on) = 6.3 Ω (Max. ) @ VGS = 10 V, ID = 1.2 A.
- Low Gate Charge (Typ. 12 nC).
- Low Crss (Typ. 5.5 pF).
- 100% Avalanche Tested
D
GD S
G
TO-220
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQP2N80 800 2.4 1.52 9.6 ± 30
(Note 2) (Note 1) (Note.
P2N80_FairchildSemiconductor.pdf
