P2N80 Key Features
- 2.4 A, 800 V, RDS(on) = 6.3 Ω (Max.) @ VGS = 10 V, ID = 1.2 A
- Low Gate Charge (Typ. 12 nC)
- Low Crss (Typ. 5.5 pF)
- 100% Avalanche Tested
- Part: P2N80
- Description: FQP2N80
- Manufacturer: Fairchild Semiconductor
- Size: 454.80 KB
Other P2N80 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
VBsemi |
P2N80 | Power MOSFET |