P2N80 Datasheet and Specifications PDF

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to .

* 2.4 A, 800 V, RDS(on) = 6.3 Ω (Max.) @ VGS = 10 V, ID = 1.2 A
* Low Gate Charge (Typ. 12 nC)
* Low Crss (Typ. 5.5 pF)
* 100% Avalanche Tested D GD S G TO-220 S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted. Parameter Drain.

P2N80-VB P2N80-VB Datasheet Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 850 VGS = 10 V 2.7 78 9.6 45 Single FEATURES • Ha.

* Halogen-free According to IEC 61249-2-21 Definition
* Dynamic dV/dt Rating
* Repetitive Avalanche Rated
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements
* Compliant to RoHS Directive 2002/95/EC TO-220AB D S D G G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unles.