P2N80 Overview
Key Specifications
Package: TO-220-3
Mount Type: Through Hole
Pins: 3
Height: 15.75 mm
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
Key Features
- 2.4 A, 800 V, RDS(on) = 6.3 Ω (Max.) @ VGS = 10 V, ID = 1.2 A
- Low Gate Charge (Typ. 12 nC)
- Low Crss (Typ. 5.5 pF)
- 100% Avalanche Tested D GD S G TO-220 S
