PF8N60C Overview
Key Specifications
Package: TO-220-3
Mount Type: Through Hole
Pins: 3
Height: 16.61 mm
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V
- Low gate charge ( typical 28 nC)
- Low Crss ( typical 12 pF)
- Fast switching
- 100% avalanche tested
