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PF8N60C Datasheet - Fairchild Semiconductor

FQPF8N60C

PF8N60C Features

* 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V

* Low gate charge ( typical 28 nC)

* Low Crss ( typical 12 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability D ! GDS TO-220 FQP Series GD S TO-220F FQPF Series G!

* ◀▲

PF8N60C General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

PF8N60C Datasheet (924.38 KB)

Preview of PF8N60C PDF

Datasheet Details

Part number:

PF8N60C

Manufacturer:

Fairchild Semiconductor

File Size:

924.38 KB

Description:

Fqpf8n60c.

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TAGS

PF8N60C FQPF8N60C Fairchild Semiconductor

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