Datasheet4U Logo Datasheet4U.com

PFV218N50 - 500V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • 550V @TJ = 150°C.
  • Typ. RDS(on) = 0.265Ω @VGS = 10 V.
  • Low gate charge (typical 42 nC).
  • Low Crss (typical 11 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PFV CONDUCTIVE POLYMER ALUMINUM SOLID ELECTROLYTIC CAPACITORS Rubycon

Other Datasheets by Fairchild (now onsemi)

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET QFET® FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET Features • 550V @TJ = 150°C • Typ. RDS(on) = 0.265Ω @VGS = 10 V • Low gate charge (typical 42 nC) • Low Crss (typical 11 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.