Datasheet Summary
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Advanced Power MOSFET
Features
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = -60V Low RDS(ON) : 0.22 Ω (Typ.)
SFW/I2955
BVDSS = -60 V RDS(on) = 0.3Ω ID = -9.4 A
D2-PAK
2 o
I2-PAK
1 3 2 3
1. Gate 2. Drain 3....