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SSF17N60A - Advanced Power MOSFET

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Features

  • Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 600V Lower RDS(ON) : 0.356 Ω (Typ. ) SSF17N60A BVDSS = 600 V RDS(on) = 0.45 Ω ID = 9 A TO-3PF 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Dra.

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Datasheet Details

Part number SSF17N60A
Manufacturer Fairchild Semiconductor
File Size 270.51 KB
Description Advanced Power MOSFET
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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Lower RDS(ON) : 0.356 Ω (Typ.) SSF17N60A BVDSS = 600 V RDS(on) = 0.45 Ω ID = 9 A TO-3PF 1 2 3 1.Gate 2. Drain 3.
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