SSF7N60B - 600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

• 5.4A, 600V, RDS(on) = 1.2Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 23 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ! # " ! ! G! G D S TO-3PF SSF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current.