Description
The SSF7N60 is a new generation of high voltage
N
Channel enhancement mode power MOSFETs and is obtained through an extreme optimization layout design, in additional to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability, provide superior sw
Features
- Extremely high dv/dt capability.
- Low Gate Charge Qg results in Simple Drive Requirement.
- 100% avalanche tested.
- Gate charge minimized.
- Very low intrinsic capacitances.
- Very good manufacturing repeatability.
SSF7N60 Datasheet
