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SSF7N60 - N-Channel MOSFET

General Description

The SSF7N60 is a new generation of high voltage N Channel enhancement mode power MOSFETs and is obtained through an extreme optimization layout design, in additional to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability, provide superior sw

Key Features

  • Extremely high dv/dt capability.
  • Low Gate Charge Qg results in Simple Drive Requirement.
  • 100% avalanche tested.
  • Gate charge minimized.
  • Very low intrinsic capacitances.
  • Very good manufacturing repeatability.

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Datasheet Details

Part number SSF7N60
Manufacturer SILIKRON
File Size 406.87 KB
Description N-Channel MOSFET
Datasheet download datasheet SSF7N60 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSF7N60 Features ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability Description The SSF7N60 is a new generation of high voltage N–Channel enhancement mode power MOSFETs and is obtained through an extreme optimization layout design, in additional to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability, provide superior switching performance, withstand high energy pulse in the avalanche, and increases packing density. Application ■ High current, high speed switching ■ Ideal for off-line power supply, adaptor, PFC VDSS = 600V ID = 7A Rdson = 0.9Ω (typ.