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SSF7N60F - 600V N-Channel MOSFET

Download the SSF7N60F datasheet PDF. This datasheet also covers the SSF7N60F-GOOD variant, as both devices belong to the same 600v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Key Features

  • Advanced trench MOSFET process technology.
  • Special designed for PWM, load switching and general purpose.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SSF7N60F-GOOD-ARK.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SSF7N60F
Manufacturer GOOD-ARK
File Size 1.11 MB
Description 600V N-Channel MOSFET
Datasheet download datasheet SSF7N60F Datasheet

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Other Datasheets by GOOD-ARK

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SSF7NS60D 600V N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Main Product Characteristics VDSS 600V RDS(on) 0.9ohm(typ.) ID 7A TO-220F Features and Benefits  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature  Lead free product SSF7N60F 600V N-Channel MOSFET Marking and Pin Assignment Schematic Diagram Description It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.