SSF6N80A Datasheet Advanced Power MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: Advanced Power MOSFET SSF6N80A.

Datasheet Details

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 800V Low RDS(ON) : 1.472 Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 ΟC) Continuous Drain Current (TC=100 ΟC) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Pulsed Avalanche Energy O2 Ava.

Part Number	Description	Manufacturer
SSF6N80A	Advanced Power MOSFET	Samsung Electronics
SSF6N80A6	800V N-Channel MOSFET	GOOD-ARK
SSF6N80F	N-Channel MOSFET	SILIKRON
SSF6N80F	N-Channel MOSFET	GOOD-ARK
SSF6N80G	N-Channel MOSFET	SILIKRON