SSH10N80A Datasheet - Fairchild Semiconductor

N-CHANNEL POWER MOSFET

* Avalanche Rugged Technology

* Rugged Gate Oxide Technology

* Lower Input Capacitance

* Improved Gate Charge

* Extended Safe Operating Area

* Lower Leakage Current: 25µA (Max.) @ VDS = 800V

* Lower RDS(ON): 0.746Ω (Typ.) ABSOLUTE MAXIMUM RATI

SSH10N80A

Fairchild Semiconductor

251.68 KB

N-channel power mosfet.

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SSH10N80A N-CHANNEL POWER MOSFET Fairchild Semiconductor

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