SSH10N80A - Advanced Power MOSFET

Product Overview

Samsung

Part number	SSH10N80A
Manufacturer	Samsung
File Size	209.61 KB
Description	Advanced Power MOSFET
Datasheet	SSH10N80A Datasheet
Additional preview pages of the SSH10N80A datasheet.

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 700V Low RDS(ON) : 1.552 Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 ΟC ) Continuous Drain Current (TC=100 ΟC) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current.

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Published: Dec 31, 2016 |