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SSH10N80A - N-CHANNEL POWER MOSFET

Datasheet Summary

Features

  • Avalanche Rugged Technology.
  • Rugged Gate Oxide Technology.
  • Lower Input Capacitance.
  • Improved Gate Charge.
  • Extended Safe Operating Area.
  • Lower Leakage Current: 25µA (Max. ) @ VDS = 800V.
  • Lower RDS(ON): 0.746Ω (Typ. ).

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Datasheet Details

Part number SSH10N80A
Manufacturer Fairchild Semiconductor
File Size 251.68 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet SSH10N80A Datasheet
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Full PDF Text Transcription

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N-CHANNEL POWER MOSFET FEATURES • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower Leakage Current: 25µA (Max.) @ VDS = 800V • Lower RDS(ON): 0.746Ω (Typ.) ABSOLUTE MAXIMUM RATINGS Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Characteristics Drain-to-Source Voltage Continuous Drain Current (TC = 25°C) Continuous Drain Current (TC = 100°C) Drain Current-Pulsed x Gate-to-Source Voltage Single Pulsed Avalanche Energy y Avalanche Current x Repetitive Avalanche Energy x Peak Diode Recovery dv/dt z Total Power Dissipation (TC = 25°C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp.
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