SSP1N60B Datasheet N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

SSP1N60B n-channel mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	SSP1N60B
Manufacturer	Fairchild (now onsemi)
File Size	879.19 KB
Description	N-Channel MOSFET
Download	SSP1N60B Download (PDF)

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switch mode power supplies.

Overview

www.DataSheet4U.com SSP1N60B/SSS1N60B November 2001 SSP1N60B/SSS1N60B 600V N-Channel.

Key Features

1.0A, 600V, RDS(on) = 12Ω @VGS = 10 V Low gate charge ( typical 5.9 nC) Low Crss ( typical 3.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 SSP Series GD S TO-220F SSS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain.

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