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SSP2N90A - Advanced Power MOSFET

Features

  • Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area θ Lower Leakage Current : 25 µA (Max. ) @ VDS = 900V SSP2N90A BVDSS = 900 V RDS(on) = 7.0 Ω ID = 2 A TO-220 Low RDS(ON) : 5.838 Ω (Typ. ) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain.

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www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area θ Lower Leakage Current : 25 µA (Max.) @ VDS = 900V SSP2N90A BVDSS = 900 V RDS(on) = 7.0 Ω ID = 2 A TO-220 Low RDS(ON) : 5.838 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3.
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