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SSW2N80A - Advanced Power MOSFET

SSW2N80A Description

www.DataSheet4U.com Advanced Power MOSFET .

SSW2N80A Features

* Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 800V Low RDS(ON) : 4.688 Ω (Typ. ) SSW/I2N80A BVDSS = 800 V RDS(on) = 6.0 Ω ID = 2 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2.

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Advanced Power MOSFET Fairchild Semiconductor
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