SSW2N80A - Advanced Power MOSFET

Product Overview

Fairchild Semiconductor

Part number	SSW2N80A
Manufacturer	Fairchild Semiconductor
File Size	290.05 KB
Description	Advanced Power MOSFET
Datasheet	SSW2N80A Datasheet
Additional preview pages of the SSW2N80A datasheet.

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 800V Low RDS(ON) : 4.688 Ω (Typ. ) SSW/I2N80A BVDSS = 800 V RDS(on) = 6.0 Ω ID = 2 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (.

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Published: Jan 11, 2007 |