Datasheet4U Logo Datasheet4U.com

TIP140T - NPN Epitaxial Silicon Darlington Transistor

Key Features

  • Monolithic Construction With Built In Base-Emitter Shunt Resistors.
  • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min. ).
  • Industrial Use.
  • Complement to TIP145T/146T/147T Equivalent Circuit C July 2009 B 1 TO-220 1.Base 2.Collector 3.Emitter R1 R1 ≅ 8kΩ R2 ≅ 0.12kΩ R2 E Absolute Maximum Ratings.
  • TA = 25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : TIP140T : TIP141T : TIP142T 60 V 80 V 100 V VCE.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TIP140T Silicon NPN Power Transistor Inchange Semiconductor
TIP140T PNP Epitaxial Silicon Darlington Transistor SEMIHOW
TIP140 Darlington Complementary Silicon Power Transistors ON Semiconductor
TIP140 NPN TRANSISTORS CDIL
TIP140 NPN Transistor INCHANGE

Other Datasheets by Fairchild (now onsemi)

Part Number Description
TIP140 NPN Epitaxial Silicon Darlington Transistor
TIP140F NPN Epitaxial Darlington Transistor
TIP141 NPN Epitaxial Silicon Darlington Transistor
TIP141F NPN Epitaxial Darlington Transistor
TIP141T NPN Epitaxial Silicon Darlington Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TIP140T / TIP141T / TIP142T — NPN Epitaxial Silicon Darlington Transistor TIP140T / TIP141T / TIP142T NPN Epitaxial Silicon Darlington Transistor Features • Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) • Industrial Use • Complement to TIP145T/146T/147T Equivalent Circuit C July 2009 B 1 TO-220 1.Base 2.Collector 3.Emitter R1 R1 ≅ 8kΩ R2 ≅ 0.