| Part Number | TIP140T |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·High DC Current Gain- : hFE = 1000(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) ·Complement to Type TIP145T ·Minimum Lot-to-Lot variations for robust device performance . ton Power Transistor TIP140T ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0 60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A ,IB= 10mA 2.0 V VCE(sat)-2 C. |
TIP140T Datasheet
The TIP140T is a Silicon NPN Power Transistor.
| Part Number | TIP140T |
|---|---|
| Description | NPN Epitaxial Silicon Darlington Transistor |
| Manufacturer | Fairchild Semiconductor |
| Overview |
TIP140T / TIP141T / TIP142T — NPN Epitaxial Silicon Darlington Transistor
TIP140T / TIP141T / TIP142T NPN Epitaxial Silicon Darlington Transistor
Features
• Monolithic Construction With Built In Base.
* Monolithic Construction With Built In Base-Emitter Shunt Resistors * High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) * Industrial Use * Complement to TIP145T/146T/147T Equivalent Circuit C July 2009 B 1 TO-220 1.Base 2.Collector 3.Emitter R1 R1 ≅ 8kΩ R2 ≅ 0.12kΩ R2 E Absolute Ma. |
| Part Number | TIP140T |
|---|---|
| Description | PNP Epitaxial Silicon Darlington Transistor |
| Manufacturer | SEMIHOW |
| Overview | TIP140T/141T/142T TIP140T/141T/142T ◎ SEMIHOW REV.A0,Oct 2007 TIP140T/141T/142T TIP140T/141T/142T Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=10. . |