Fairchild Semiconductor TIP147T
PNP Epitaxial Silicon Darlington Transistor
FEATURES
● Monolithic Construction with Built-in Base-Emitter Shunt Resistors● High DC Current Gain: hFE = 1000 at VCE = -4 V, IC = -5 A (Minimum)
● Industrial Use
● Complement to TIP142T Equivalent Circuit C B 1 TO-220 1.Base 2.Collector 3.Emitter R1 ≅Ω ≅Ω R2 E Ordering Information Part Number TIP147T TIP147TTU Top Mark TIP147T TIP147T Package TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) Packing Method Bulk Rail
ABSOLUTE MAXIMUM RATINGS
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are