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TIP147T - PNP Epitaxial Silicon Darlington Transistor

Key Features

  • Monolithic Construction with Built-in Base-Emitter Shunt Resistors.
  • High DC Current Gain: hFE = 1000 at VCE = -4 V, IC = -5 A (Minimum).
  • Industrial Use.
  • Complement to TIP142T Equivalent Circuit C B 1 TO-220 1.Base 2.Collector 3.Emitter R1 ≅Ω ≅Ω R2 E Ordering Information Part Number TIP147T TIP147TTU Top Mark TIP147T TIP147T Package TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) Packing Method Bulk Rail Absolute Maximum Ratings Stresses excee.

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TIP147T — PNP Epitaxial Silicon Darlington Transistor November 2014 TIP147T PNP Epitaxial Silicon Darlington Transistor Features • Monolithic Construction with Built-in Base-Emitter Shunt Resistors • High DC Current Gain: hFE = 1000 at VCE = -4 V, IC = -5 A (Minimum) • Industrial Use • Complement to TIP142T Equivalent Circuit C B 1 TO-220 1.Base 2.Collector 3.Emitter R1 ≅Ω ≅Ω R2 E Ordering Information Part Number TIP147T TIP147TTU Top Mark TIP147T TIP147T Package TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) Packing Method Bulk Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device.