TIP147T Key Features
- Monolithic Construction with Built-in Base-Emitter Shunt Resistors
- High DC Current Gain: hFE = 1000 at VCE = -4 V, IC = -5 A (Minimum)
- Industrial Use
- plement to TIP142T
| Manufacturer | Part Number | Description |
|---|---|---|
Continental Device India |
TIP147T | SILICON PLANAR POWER DARLINGTON TRANSISTORS |
SemiHow |
TIP147T | Monolithic Construction |
Transys |
TIP147T | SILICON PLANAR POWER DARLINGTON TRANSISTORS |
| TIP147T | Silicon PNP Darlington Power Transistor | |
STMicroelectronics |
TIP147T | Complementary power Darlington transistors |