STMicroelectronics TIP147T
The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.FEATURES
● Monolithic Darlington configuration● Integrated antiparallel collector-emitter diode Application
● Linear and switching industrial equipment
DESCRIPTION
TAB 3 2 1 TO-220 Figure 1. Internal schematic diagrams R1 typ. = 5 kΩ R2 typ. = 60 Ω R1 typ. = 8 kΩ R2 typ. = 100 Ω Table 1. Device summary Part number Marking TIP142T TIP147T TIP142T TIP147T Polarity NPN PNP Package TO-220 May 2010 Doc ID 4135 Rev 5 Packaging Tube 1/8 8 Absolute maximum ratings 1 Absolute maximum ratings TIP142T, TIP147T Note: Table 2. Absolute maximum ratings Symbol Parameter VCBO VCEO VEBO IC ICM IB PTOT TSTG TJ Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0)