TIP147T Description
TIP147T PNP Epitaxial Silicon Darlington Transistor November 2014 TIP147T PNP Epitaxial Silicon Darlington Transistor.
TIP147T Key Features
- Monolithic Construction with Built-in Base-Emitter Shunt Resistors
- High DC Current Gain: hFE = 1000 at VCE = -4 V, IC = -5 A (Minimum)
- Industrial Use
- plement to TIP142T