The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TIP145/146/147
TIP145/146/147
Monolithic Construction With Built In BaseEmitter Shunt Resistors
• High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A (Min.) • Industrial Use • Complement to TIP140/141/142
1
TO-3P
PNP Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : TIP145 : TIP146 : TIP147 Value - 60 - 80 - 100 - 60 - 80 - 100 -5 - 10 - 15 - 0.5 125 150 - 65 ~ 150 Units V V V V V V V A A A W °C °C
1.Base 2.Collector 3.