TIP145 Datasheet and Specifications PDF

The TIP145 is a Darlington Complementary Silicon Power Transistors.

Key Specifications

PackageTO-247
Pins3
Max Operating Temp150 °C
Min Operating Temp-65 °C
Part NumberTIP145 Datasheet
Manufactureronsemi
Overview DATA SHEET Darlington Complementary Silicon Power Transistors TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Designed for general−purpose amplifier and low frequency swi.
* High DC Current Gain
* Min hFE = 1000 @ IC = 5.0 A, VCE = 4 V
* Collector
*Emitter Sustaining Voltage
* @ 30 mA VCEO(sus) = 60 Vdc (Min)
* TIP140, TIP145 = 80 Vdc (Min)
* TIP141, TIP146 = 100 Vdc (Min)
* TIP142, TIP147
* Monolithic Construction with Built
*In Base
*Emitter Shunt Resistor
* These are .
Part NumberTIP145 Datasheet
DescriptionPNP Epitaxial Silicon Darlington Transistor
ManufacturerFairchild Semiconductor
Overview TIP145/146/147 TIP145/146/147 Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A (Min.) • Industrial Use • Complement to TIP14. Cut-off Curren : TIP145 : TIP146 : TIP147 ICBO Collector Cut-off Current : TIP145 : TIP146 : TIP147 IEBO hFE VCE(sat) VBE(sat) VBE(on) tD tR tSTG tF Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter ON Voltage Delay Time Rise T.
Part NumberTIP145 Datasheet
DescriptionCOMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
ManufacturerCentral Semiconductor
Overview The CENTRAL SEMICONDUCTOR TIP140 and TIP145 series devices are complementary silicon power Darlington transistors manufactured by the epitaxial base process, designed for general purpose amplifier an. YP ICBO VCB=Rated VCBO ICEO VCE=½Rated VCEO IEBO VEB=5.0V BVCEO IC=30mA (TIP140, TIP145) 60 BVCEO IC=30mA (TIP141, TIP146) 80 BVCEO IC=30mA (TIP142, TIP147) 100 VCE(SAT) IC=5.0A, IB=10mA VCE(SAT) IC=10A, IB=40mA VBE(ON) VCE=4.0V, IC=10A VF IF=10A hFE VCE=4.0V, IC=5.0A 1.0K h.
Part NumberTIP145 Datasheet
DescriptionSilicon PNP Transistor
ManufacturerNTE Electronics
Overview The TIP145 is a silicon PNP Darlington transistor in a TO−247 type package designed for general purpose amplifier and low frequency switching applications. Features: D High DC Current Gain: hFE = 10. D High DC Current Gain: hFE = 1000 (Min) at IC = 5A, VCE = 4V D Collector
*Emitter Sustaining Voltage: VCEO(sus) = 60V (Min) at IC = 30mA Absolute Maximum Ratings: (Note 1) Collector
*Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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