TIP145 Datasheet | STMicroelectronics

DESCRIPTION The TIP140, TIP141 and TIP142 are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration, mounted in TO-218 plastic package. They are intented for use in power linear and switching applications. The plementary PNP types are TIP145, TIP146 and TIP147 respectively. TO-218 INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 5 KΩ R2 Typ. = 150 Ω ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEO V EBO IC I CM IB P tot T stg Tj Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T case ≤ 25 o C Storage Temperature Max. Operating Junction Temperature TIP140 TIP145 60 60 Value TIP141 TIP146 80 80 5 10 20 0.5 125 -65 to 150 150 TIP142 TIP147 100 100 V V V A A A W o o Unit For PNP types voltage and current values are negative. March 2000 1/4 TIP140 / TIP141 / TIP142 / TIP145 / TIP146 / TIP147 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) Symbol I CBO Parameter Collector Cut-off Current (I E = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions for TIP140/145 for TIP141/146 for TIP142/147 for TIP140/145 for TIP141/146 for TIP142/147 V EB = 5 V I C = 30 m A for TIP140/145 for TIP141/146 for TIP142/147 IC = 5 A I C = 10 A I C = 10 A IC = 5 A I C = 10 A I C = 10 A I B2 = -40 m A I B = 10 m A I B = 40 m A V CE = 4 V V CE = 4 V V CE = 4 V I B1 = 40 m A RL = 3 Ω 1000 500 0.9 4 µs µs V CB = 60 V V CB = 80 V V CB = 100 V V CE = 30 V V CE = 40 V V CE = 50 V Min. Typ. Max. 1 1 1 2 2 2 2 Unit m A m A m A m A m A m A m A I CEO I EBO VCEO(sus) - Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) - V BE(on) - h FE - Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain RESISTIVE LOAD Turn-on Time Turn-off Time 60 80 100 2 3 3 V V V V V V t on t off For PNP types...