TIP145G - Darlington Complementary Silicon Power Transistors

onsemi

Download the TIP145G datasheet PDF. This datasheet also covers the TIP147 variant, as both devices belong to the same darlington complementary silicon power transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

High DC Current Gain.
Min hFE = 1000 @ IC = 5.0 A, VCE = 4 V.
Collector.
Emitter Sustaining Voltage.
@ 30 mA VCEO(sus) = 60 Vdc (Min).
TIP140, TIP145 = 80 Vdc (Min).
TIP141, TIP146 = 100 Vdc (Min).
TIP142, TIP147.
Monolithic Construction with Built.
In Base.
Emitter Shunt Resistor.
These are Pb.
Free Devices.

📥 Download Datasheet

TIP145G darlington complementary silicon power transistors by onsemi - Datasheet Preview — Note: The manufacturer provides a single datasheet file (TIP147_ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	TIP145G
Manufacturer	onsemi
File Size	267.99 KB
Description	Darlington Complementary Silicon Power Transistors
Datasheet	TIP145G Datasheet

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Other Datasheets by onsemi

Part Number	Description
TIP145	Darlington Complementary Silicon Power Transistors
TIP140	Darlington Complementary Silicon Power Transistors
TIP140G	Darlington Complementary Silicon Power Transistors
TIP141	Darlington Complementary Silicon Power Transistors
TIP141G	Darlington Complementary Silicon Power Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

DATA SHEET www.onsemi.com Darlington Complementary Silicon Power Transistors TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain − Min hFE = 1000 @ IC = 5.