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TIP147 - PNP Epitaxial Silicon Darlington Transistor

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TIP145/146/147 TIP145/146/147 Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A (Min.) • Industrial Use • Complement to TIP140/141/142 1 TO-3P PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : TIP145 : TIP146 : TIP147 Value - 60 - 80 - 100 - 60 - 80 - 100 -5 - 10 - 15 - 0.5 125 150 - 65 ~ 150 Units V V V V V V V A A A W °C °C 1.Base 2.Collector 3.