STMicroelectronics TIP147
The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.| Part No. | TIP147 |
|---|---|
| Datasheet | TIP147 Download |
| Manufacturer |  STMicroelectronics |
| Description | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| Buy | Stock & Price |
FEATURES
● Monolithic Darlington configuration● Integrated antiparallel collector-emitter diode
APPLICATIONS
● Linear and switching industrial equipmentDESCRIPTION
Datasheet — production data 3 2 1 TO-247 Figure 1. Internal schematic diagrams R1 typ. = 5 kΩ R2 typ. = 60 Ω R1 typ. = 8 kΩ R2 typ. = 100 Ω Table 1. Device summary Part number Marking TIP142 TIP142 TIP147 TIP147 Polarity NPN PNP Package TO-247 Packaging Tube April 2012 This is information on a product in full production. Doc ID 4132 Rev 8 1/10 10 Absolute maximum ratings 1 Absolute maximum ratings TIP142, TIP147 Note: Table 2. Absolute maximum ratings Symbol Parameter VCBO VCEO VEBO IC ICM IB PTOT TSTG TJ Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current Base current Total dissipation at Tcase = 25 °C Storage temperature Max. operating junction temperature For PNP type voltage and current are negative. Table 3. Thermal data Symbol Param...
