USB10P mosfet equivalent, p-channel 2.5v specified powertrenchtm mosfet.
-4.5 A, -20 V. RDS(ON) = 0.045 Ω @ VGS = -4.5 V RDS(ON) = 0.065 Ω @ VGS = -2.5 V. Low gate charge (13nC typical). High performance trench technology for extremely low RDS.
load switching and power management, battery charging circuits, and DC/DC conversion.
Features
-4.5 A, -20 V. RDS(ON) .
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