Datasheet4U Logo Datasheet4U.com

USB10P - P-Channel 2.5V Specified PowerTrenchTM MOSFET

Description

This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Features

  • -4.5 A, -20 V. RDS(ON) = 0.045 Ω @ VGS = -4.5 V RDS(ON) = 0.065 Ω @ VGS = -2.5 V. Low gate charge (13nC typical). High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 S D D 1 6 2 G D D pin 1 TM 5 3 4 SuperSOT -6 Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise note Ratings Units VDSS VGSS ID PD Drai.

📥 Download Datasheet

Datasheet preview – USB10P

📁 Similar Datasheet

  • USB10 - RECTIFIERS ASSEMBLIES (Microsemi Corporation)
  • USB15 - RECTIFIERS ASSEMBLIES (Microsemi Corporation)
  • USB-1SP16T-83H - Solid-State Switch (Mini-Circuits)
  • USB-A-D-F-x-xxx - (USB-A Series) Interfaces (Samtec)
  • USB-A-D-S-x-xxx - (USB-A Series) Interfaces (Samtec)
  • USB-A-S-F-W-SM1 - (USB-A Series) Interfaces (Samtec)
  • USB-A-S-F-x-xxx - (USB-A Series) Interfaces (Samtec)
  • USB-A-S-S-x-xxx - (USB-A Series) Interfaces (Samtec)
  • USB0001DP - (USB000x) Multilayer Ceramic Transient Voltage Suppressors (Kyocera)
  • USB0001DQ - (USB000x) Multilayer Ceramic Transient Voltage Suppressors (Kyocera)
Other Datasheets by Fairchild Semiconductor
  • USB100 - Programmable Low-Cost USB Machine (PLUM)
  • USB10H - Dual P-Channel 2.5V Specified PowerTrench MOSFET
  • USB1101 - USB 2.0 FS Peripheral Transceiver
  • USB1T1102 - Universal Serial Bus Peripheral Transceiver with Voltage Regulator
  • USB1T1103 - Universal Serial Bus Peripheral Transceiver
  • USB1T1104 - Universal Serial Bus Peripheral Transceiver
  • USB1T1105A - Universal Serial Bus Peripheral Transceiver
  • USB1T11A - Universal Serial Bus Transceiver

Full PDF Text Transcription

Click to expand full text
June 1999 USB10P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion. Features -4.5 A, -20 V. RDS(ON) = 0.045 Ω @ VGS = -4.5 V RDS(ON) = 0.065 Ω @ VGS = -2.5 V. Low gate charge (13nC typical). High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
Published: |