FP750SOT343 phemt equivalent, packaged low noise/ medium power phemt.
* 0.5 dB Noise Figure at 2 GHz
* 21 dBm P-1dB 2 GHz
* 17 dB Power Gain at 2 GHz
* 33 dBm IP3 at 2 GHz
* 45% Power-Added-Efficiency
*
DESCRIPTION.
The FP750SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for .
AND APPLICATIONS The FP750SOT343 is a packaged AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (pHEMT) intended for applications requiring low noise figure, medium output power and/or high dynamic range. It utilizes a 0.25 µm x 7.
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