PHEMT Datasheet | Specifications & PDF Download

MwT-PH7F 28 GHz Medium Power AlGaAs/InGaAs pHEMT Features: • 24.5 dBm of Power at 18 GHz • 15 dB typical Small Signal Gain at 18 GHz • 45% typical P

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HMC487LP5 / 487LP5E v01.0705 www.DataSheet4U.com SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER, 9 - 12 GHz 5 AMPLIFIERS - SMT Typical Applications Th

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MwT-PH11F/MwT-PH11FV 12 GHz High Power AlGaAs/InGaAs pHEMT Features: • 33 dBm of Power at 12 GHz • 12 dB Small Signal Gain at 12 GHz • 45% PAE at 12

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MwT-PH11F/MwT-PH11FV 12 GHz High Power AlGaAs/InGaAs pHEMT Features: • 33 dBm of Power at 12 GHz • 12 dB Small Signal Gain at 12 GHz • 45% PAE at 12

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PRELIMINARY DATA SHEET FP100 HIGH PERFORMANCE PHEMT • FEATURES ♦ 14 dBm P-1dB at 12 GHz ♦ 9 dB Power Gain at 12 GHz ♦ 3.0 dB Noise Figure at 12 GHz

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MwT-LN600 26 GHz Super Low Noise pHEMT Device May 2010 FEATURES 0.50 dB Minimum Noise Figure at 12 GHz 8.0 dB Associated Gain at 12 GHz 20.0 dBm P1dB

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LOW NOISE PHEMT MMIC • FEATURES ♦ ♦ ♦ ♦ ♦ 26 GHz to 30 GHz Frequency Band 3.0 dB Noise Figure 22 dB Gain 5 dBm Output Power at Saturation +3 V Single

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Freescale Semiconductor Technical Data Document Number: MML20211H Rev. 1, 9/2014 Enhancement Mode pHEMT Technology (E--pHEMT) Low Noise Amplifier Th

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Freescale Semiconductor Technical Data Document Number: MML09211H Rev. 1, 9/2014 Enhancement Mode pHEMT Technology (E--pHEMT) Low Noise Amplifier Th

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CFH800 Data Sheet Low-Noise, High-Linearity Packaged pHEMT FET Product Description The CFH800 is a high-linearity pHEMT FET that exhibits both a high

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E-pHEMT MMIC Product Features • Small size • Higher Gain • Higher linearity • SOIC-8 SMD Type package • Higher productivity • Lower manufacturing cost

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BCL015-70 SUPER LOW NOISE PHEMT (0.15µm x 150µm) The BeRex BCL015-70 is a GaAs Super Low Noise Enhancement Mode pHEMT in an industry standard, 70 mil

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MwT-PH33F 26 GHz Medium Power AlGaAs/InGaAs pHEMT Features: • 24 dBm of Power at 18 GHz • 14 dB Small Signal Gain at 18 GHz • 45% typical PAE at 18 GH

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HIGH PERFORMANCE LOW NOISE PHEMT • FEATURES ♦ 1.0 dB Noise Figure at 18 GHz ♦ 10 dB Associated Gain at 18 GHz ♦ Low DC Power Consumption LPS200 GATE

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LOW NOISE PHEMT MMIC • FEATURES ♦ ♦ ♦ ♦ ♦ ♦ 21 GHz to 24 GHz Frequency Band 3 dB Noise Figure 22 dB Gain 5 dBm Output Power at Saturation 12 dB Input/

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FPD1000AS 1W PACKAGED POWER PHEMT • PERFORMANCE (1.8 GHz) ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA A

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HMC608 v01.0707 GaAs PHEMT MEDIUM POWER AMPLIFIER, 9.5 - 11.5 GHz 3 LINEAR & POIWER AMPLIFIERS - CHIP Typical Applications The HMC608 is ideal for:

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Freescale Semiconductor Technical Data Document Number: MML20242H Rev. 2, 9/2014 Enhancement Mode pHEMT Technology (E--pHEMT) Low Noise Amplifier Th

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MMA051PP45 Datasheet DC–22 GHz 1W GaAs MMIC pHEMT Distributed Power Amplifier MMA051PP45 DC–22 GHz 1W GaAs MMIC pHEMT Distributed Power Amplifier Mi

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Filtronic Solid State FEATURES LP1500SOT223 Low Noise, High Linearity Packaged PHEMT • • • • • +27 dBm Typical Power at 1800 MHz 15 dB Typical Powe

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