MwT-PH11FV - 12-GHz High Power AlGaAs/InGaAs pHEMT

Product Overview

Datasheet Details

Part number	MwT-PH11FV
Manufacturer	MWT
File Size	1.86 MB
Description	12-GHz High Power AlGaAs/InGaAs pHEMT
Datasheet	MwT-PH11FV Datasheet
Note	This datasheet PDF includes multiple part numbers: MwT-PH11FV, MwT-PH11F. Please refer to the document for exact specifications by model.
Additional preview pages of the MwT-PH11FV datasheet.

Product details

Description

The MwT-PH11F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 2400 micron gate width make it ideally suited for applications requiring high power and high power added efficiency up to 12 GHz frequency range.

Features

33 dBm of Power at 12 GHz.
12 dB Small Signal Gain at 12 GHz.
45% PAE at 12 GHz.
0.25 x 2400 Micron Refractory Metal/Gold Gate.
Excellent for High Power, and High Power Added Efficiency.
Ideal for Commercial, Military, Hi-Rel Space.

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Other Datasheets by MWT

MwT-PH11F - 12-GHz High Power AlGaAs/InGaAs pHEMT
MwT-5F - Dual Gate GaAs FET
MwT-7F - 26GHz Medium Power GaAs FET
MwT-LN600 - 26 GHz Super Low Noise pHEMT

Published: Nov 12, 2024 |