Datasheet Details
| Part number | MwT-11F |
|---|---|
| Manufacturer | CML |
| File Size | 829.38 KB |
| Description | High Linearity GaAs FET |
| Datasheet |
 MwT-11F Datasheet
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| Part number | MwT-11F |
|---|---|
| Manufacturer | CML |
| File Size | 829.38 KB |
| Description | High Linearity GaAs FET |
| Datasheet |
MwT-11F Datasheet
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Chip Dimensions: 780 x 345 microns Chip Thickness: 100 microns The MwT-11F is GaAs MESFET device whose nominal 0.25 micron gate length and 2400 microns gate width make it ideally suited for applications requiring high power up to 32 dBm.The device has very good linearity and power added efficiency.All chips are passivated with SiN (Silicon Nitride).RF Specifications: at Ta= 25°C DC Specifications: at Ta= 25 °C www.cmlmicro.com 1 November 2023 MwT-11F High Power, H
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