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MwT-11F

High Linearity GaAs FET

MwT-11F Features

* 32 dBm Output Power at 8 GHz

* 9 dB Typical Small Signal Gain at 8 GHz

* 0.25 x 2400 Micron Refractory Metal/Gold Gate

* Excellent for Linear High Power and High Power Added Efficiency Applications

* Ideal for Commercial, Military, Hi-Rel Space Applications

MwT-11F General Description

Chip Dimensions: 780 x 345 microns Chip Thickness: 100 microns The MwT-11F is GaAs MESFET device whose nominal 0.25 micron gate length and 2400 microns gate width make it ideally suited for applications requiring high power up to 32 dBm. The device has very good linearity and power added efficien.

MwT-11F Datasheet (829.38 KB)

Preview of MwT-11F PDF

Datasheet Details

Part number:

MwT-11F

Manufacturer:

CML

File Size:

829.38 KB

Description:

High linearity gaas fet.

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MwT-11F High Linearity GaAs FET CML

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