MwT-11F - High Linearity GaAs FET
Chip Dimensions: 780 x 345 microns Chip Thickness: 100 microns The MwT-11F is GaAs MESFET device whose nominal 0.25 micron gate length and 2400 microns gate width make it ideally suited for applications requiring high power up to 32 dBm.
The device has very good linearity and power added efficien
MwT-11F Features
* 32 dBm Output Power at 8 GHz
* 9 dB Typical Small Signal Gain at 8 GHz
* 0.25 x 2400 Micron Refractory Metal/Gold Gate
* Excellent for Linear High Power and High Power Added Efficiency Applications
* Ideal for Commercial, Military, Hi-Rel Space Applications
