MwT-PH33F Datasheet - CML

MwT-PH33F Medium Power AlGaAs/InGaAs pHEMT

The MwT-PH33F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 300 micron gate width make it ideally suited for applications requiring high-gain and medium power up to 26 GHz frequency range. The device is equally effective .

MwT-PH33F Features

* 24 dBm of Power at 18 GHz

* 14 dB Small Signal Gain at 18 GHz

* 45% typical PAE at 18 GHz

* 0.25 x 300 Micron Refractory Metal/Gold Gate

* Excellent for Medium Power, Gain, and High Power Added Efficiency

* Ideal for Commercial, Military, Hi-Rel Spa

MwT-PH33F-CML.pdf