MwT-PH33F - Medium Power AlGaAs/InGaAs pHEMT

Product Overview

CML

MwT-PH33F Medium Power AlGaAs/InGaAs pHEMT by CML - Datasheet Preview — Datasheet preview – MwT-PH33F

Datasheet Details

Part number	MwT-PH33F
Manufacturer	CML
File Size	627.01 KB
Description	Medium Power AlGaAs/InGaAs pHEMT
Datasheet	MwT-PH33F Datasheet
Additional preview pages of the MwT-PH33F datasheet.

Product details

Description

The MwT-PH33F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 300 micron gate width make it ideally suited for applications requiring high-gain and medium power up to 26 GHz frequency range.

Features

24 dBm of Power at 18 GHz.
14 dB Small Signal Gain at 18 GHz.
45% typical PAE at 18 GHz.
0.25 x 300 Micron Refractory Metal/Gold Gate.
Excellent for Medium Power, Gain, and High Power Added Efficiency.
Ideal for Commercial, Military, Hi-Rel Space.

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Other Datasheets by CML

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Published: Jan 1, 2025 |