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MwT-PH33F

Medium Power AlGaAs/InGaAs pHEMT

MwT-PH33F Features

* 24 dBm of Power at 18 GHz

* 14 dB Small Signal Gain at 18 GHz

* 45% typical PAE at 18 GHz

* 0.25 x 300 Micron Refractory Metal/Gold Gate

* Excellent for Medium Power, Gain, and High Power Added Efficiency

* Ideal for Commercial, Military, Hi-Rel Spa

MwT-PH33F General Description

The MwT-PH33F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 300 micron gate width make it ideally suited for applications requiring high-gain and medium power up to 26 GHz frequency range. The device is equally effective .

MwT-PH33F Datasheet (627.01 KB)

Preview of MwT-PH33F PDF

Datasheet Details

Part number:

MwT-PH33F

Manufacturer:

CML

File Size:

627.01 KB

Description:

Medium power algaas/ingaas phemt.

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TAGS

MwT-PH33F Medium Power AlGaAs InGaAs pHEMT CML

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