MwT-PH33F - Medium Power AlGaAs/InGaAs pHEMT
The MwT-PH33F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 300 micron gate width make it ideally suited for applications requiring high-gain and medium power up to 26 GHz frequency range.
The device is equally effective
MwT-PH33F Features
* 24 dBm of Power at 18 GHz
* 14 dB Small Signal Gain at 18 GHz
* 45% typical PAE at 18 GHz
* 0.25 x 300 Micron Refractory Metal/Gold Gate
* Excellent for Medium Power, Gain, and High Power Added Efficiency
* Ideal for Commercial, Military, Hi-Rel Spa
