Description
The MwT-PH11F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 2400 micron gate width make it ideally suited for applications requiring high power and high power added efficiency up to 12 GHz frequency range.
Features
- 33 dBm of Power at 12 GHz.
- 12 dB Small Signal Gain at 12 GHz.
- 45% PAE at 12 GHz.
- 0.25 x 2400 Micron Refractory Metal/Gold Gate.
- Excellent for High Power, and High Power
Added Efficiency.
- Ideal for Commercial, Military, Hi-Rel Space.
MwT-PH11F Datasheet
