MwT-PH7F Datasheet - CML

MwT-PH7F Medium Power AlGaAs/InGaAs pHEMT

Chip Dimensions: 365 x 260 microns Chip Thickness: 100 microns The MwT-PH7F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 250 micron gate width make it ideally suited for applications requiring high-gain and medium powe.

MwT-PH7F Features

* 24.5 dBm of Power at 18 GHz

* 15 dB typical Small Signal Gain at 18 GHz

* 45% typical PAE at 18 GHz

* 0.25 x 250 Micron Refractory Metal/Gold Gate

* Excellent for High Gain, and High Power Added Efficiency

* Ideal for Commercial, Military, Hi-Rel S

MwT-PH7F-CML.pdf