Datasheet4U Logo Datasheet4U.com

MwT-PH7F

Medium Power AlGaAs/InGaAs pHEMT

MwT-PH7F Features

* 24.5 dBm of Power at 18 GHz

* 15 dB typical Small Signal Gain at 18 GHz

* 45% typical PAE at 18 GHz

* 0.25 x 250 Micron Refractory Metal/Gold Gate

* Excellent for High Gain, and High Power Added Efficiency

* Ideal for Commercial, Military, Hi-Rel S

MwT-PH7F General Description

Chip Dimensions: 365 x 260 microns Chip Thickness: 100 microns The MwT-PH7F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 250 micron gate width make it ideally suited for applications requiring high-gain and medium powe.

MwT-PH7F Datasheet (618.92 KB)

Preview of MwT-PH7F PDF

Datasheet Details

Part number:

MwT-PH7F

Manufacturer:

CML

File Size:

618.92 KB

Description:

Medium power algaas/ingaas phemt.

📁 Related Datasheet

MwT-PH11F 12-GHz High Power AlGaAs/InGaAs pHEMT (MWT)

MwT-PH11FV 12-GHz High Power AlGaAs/InGaAs pHEMT (MWT)

MwT-PH33F Medium Power AlGaAs/InGaAs pHEMT (CML)

MwT-11F High Linearity GaAs FET (CML)

MwT-5F Dual Gate GaAs FET (MWT)

MwT-5F Dual Gate GaAs FET (CML)

MwT-7F 26GHz Medium Power GaAs FET (MWT)

MwT-7F Medium Power GaAs FET (CML)

MwT-LN600 26 GHz Super Low Noise pHEMT (MWT)

MW20H63 COLOR TELEVISION AND VIDEO CASSETTE RECORDER/DVD VIDEO PLAYER CIRCUIT DIAGRAMS (Toshiba)

TAGS

MwT-PH7F Medium Power AlGaAs InGaAs pHEMT CML

Image Gallery

MwT-PH7F Datasheet Preview Page 2 MwT-PH7F Datasheet Preview Page 3

MwT-PH7F Distributor