MwT-PH7F - Medium Power AlGaAs/InGaAs pHEMT
Chip Dimensions: 365 x 260 microns Chip Thickness: 100 microns The MwT-PH7F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 250 micron gate width make it ideally suited for applications requiring high-gain and medium powe
MwT-PH7F Features
* 24.5 dBm of Power at 18 GHz
* 15 dB typical Small Signal Gain at 18 GHz
* 45% typical PAE at 18 GHz
* 0.25 x 250 Micron Refractory Metal/Gold Gate
* Excellent for High Gain, and High Power Added Efficiency
* Ideal for Commercial, Military, Hi-Rel S
