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FP100 - HIGH PERFORMANCE PHEMT

The FP100 by Filtronic Compound Semiconductors is a HIGH PERFORMANCE PHEMT. Below is the official datasheet preview.

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Official preview page of the FP100 HIGH PERFORMANCE PHEMT datasheet (Filtronic Compound Semiconductors).

Datasheet Details

Part number FP100
Manufacturer Filtronic Compound Semiconductors
File Size 32.67 KB
Description HIGH PERFORMANCE PHEMT
Datasheet download datasheet FP100_FiltronicCompoundSemiconductors.pdf
Additional preview pages of the FP100 datasheet.

FP100 Product details

Description

AND APPLICATIONS DIE SIZE: 16.5 x 16.5 mils (420 x 420 µm) DIE THICKNESS: 3.9 mils (100 µm typ.) BONDING PADS: 3.3 x 3.5 mils (85 x 90 µm typ.) The FP100 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 um by 100 um Schottky barrier gate.The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.The FP100

Features

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