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FP100

HIGH PERFORMANCE PHEMT

FP100 Features

* 14 dBm P-1dB at 12 GHz

* 9 dB Power Gain at 12 GHz

* 3.0 dB Noise Figure at 12 GHz

* DESCRIPTION AND APPLICATIONS DIE SIZE: 16.5 x 16.5 mils (420 x 420 µm) DIE THICKNESS: 3.9 mils (100 µm typ.) BONDING PADS: 3.3 x 3.5 mils (85 x 90 µm typ.) The FP100 is an Alumi

FP100 General Description

AND APPLICATIONS DIE SIZE: 16.5 x 16.5 mils (420 x 420 µm) DIE THICKNESS: 3.9 mils (100 µm typ.) BONDING PADS: 3.3 x 3.5 mils (85 x 90 µm typ.) The FP100 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an .

FP100 Datasheet (32.67 KB)

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Datasheet Details

Part number:

FP100

Manufacturer:

Filtronic Compound Semiconductors

File Size:

32.67 KB

Description:

High performance phemt.

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FP100 HIGH PERFORMANCE PHEMT Filtronic Compound Semiconductors

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