FP100 HIGH PERFORMANCE PHEMT

Filtronic Compound Semiconductors

Description

PRELIMINARY DATA SHEET FP100 HIGH PERFORMANCE PHEMT * .
AND APPLICATIONS DIE SIZE: 16.

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Datasheet Specifications

Part number: FP100
Manufacturer: Filtronic Compound Semiconductors
File Size: 32.67 KB
Datasheet: FP100_FiltronicCompoundSemiconductors.pdf
Description: HIGH PERFORMANCE PHEMT

Features

* 14 dBm P-1dB at 12 GHz
* 9 dB Power Gain at 12 GHz
* 3.0 dB Noise Figure at 12 GHz

Applications

* DIE SIZE: 16.5 x 16.5 mils (420 x 420 µm) DIE THICKNESS: 3.9 mils (100 µm typ. ) BONDING PADS: 3.3 x 3.5 mils (85 x 90 µm typ. ) The FP100 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam dir

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FP100 HIGH PERFORMANCE PHEMT Filtronic Compound Semiconductors

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