Datasheet4U Logo Datasheet4U.com

FP100 HIGH PERFORMANCE PHEMT

FP100 Description

PRELIMINARY DATA SHEET FP100 HIGH PERFORMANCE PHEMT * .
AND APPLICATIONS DIE SIZE: 16.

FP100 Features

* 14 dBm P-1dB at 12 GHz
* 9 dB Power Gain at 12 GHz
* 3.0 dB Noise Figure at 12 GHz

FP100 Applications

* DIE SIZE: 16.5 x 16.5 mils (420 x 420 µm) DIE THICKNESS: 3.9 mils (100 µm typ. ) BONDING PADS: 3.3 x 3.5 mils (85 x 90 µm typ. ) The FP100 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam dir

📥 Download Datasheet

Preview of FP100 PDF
datasheet Preview Page 2

📁 Related Datasheet

  • FP1000 - (FP1010 Series) SILICON SURGE SUPPRESSOR DIODES (ETC)
  • FP1000A - (FP1010 Series) SILICON SURGE SUPPRESSOR DIODES (ETC)
  • FP1005R - High current power inductors (EATON)
  • FP1006 - High current power inductors (EATON)
  • FP1007 - High current power inductors (EATON)
  • FP1007R6 - High current power inductors (EATON)
  • FP1009 - (FP1010 Series) SILICON SURGE SUPPRESSOR DIODES (ETC)
  • FP1009A - (FP1010 Series) SILICON SURGE SUPPRESSOR DIODES (ETC)

📌 All Tags

HIGH PERFORMANCE PHEMT Filtronic Compound Semiconductors
Filtronic Compound Semiconductors FP100-like datasheet