TGF2021-04-SD Datasheet (TriQuint Semiconductor)

TGF2021-04-SD, DC-4 GHz Packaged Power pHEMT

The TGF2021-04-SD is a high performance pseudomorphic High Electron Mobility GaAs Transistor (pHEMT) housed in a low cost SOT89 surface mount package.

The device’s ideal operating point for low noise operation is at a drain bias of 5 V and 150 mA.

At this bias at 900 MHz when matched into 50 ohms us

TGF2021-04-SD Features

* Frequency Range: DC-4 GHz Package Dimensions: 4.5 x 4 x 1.5 mm Nominal 900 MHz Low Noise Application Board Performance:

* OTOI: 39.5 dBm

* Noise Figure: 0.6dB

* Gain: 16dB

* P1dB: 26.5dBm

* Input Return Loss: -8 dB

* Output Return L