TGF2977-SM Datasheet (qorvo)

TGF2977-SM, RF Transistor

QFN Packaged Part 9 * 10 GHz EVB EAR99 2.6 * 4.2 GHz EVB Datasheet Rev.

B, July 25, 2017 | Subject to change without notice - 1 of 28 - www.qorvo.com TGF2977-SM DC * 12 GHz, 32 V, 5 W GaN RF Transistor Absolute Maximum Ratings1 Recommended Operating Conditions1 Paramet

Product Overview The Qorvo TGF2977-SM is a 5 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz and 32 V supply.

The device is in an industry standard overmolded package and is ideally suited for avionics, military, marine and weather radar.

The device can support pulsed and linear operations.

Lead-free and ROHS compliant.

Evaluation boards are available upon request.

TGF2977-SM DC 12 GHz, 32 V, 5 W GaN RF Transistor 3 x 3mm Package Functional Block Diagram N/C N/C N/

TGF2977-SM Features

* Frequency: DC to 12 GHz

* Output Power (P3dB)1: 4.8 W

* Linear Gain1: 13 dB

* Typical PAE3dB1: 50%

* Operating Voltage: 32 V

* CW and Pulse capable Note 1: @ 9 GHz Load Pull Applications

* Military radar

* Commercial radar o Avionics