TGF2023-2-01 Datasheet, Hemt, Qorvo

✔ TGF2023-2-01 Features

advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2023-2-01 typically provides 37.7 dBm of satura

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TGF2023-2-01

Qorvo

3.42 MB

Sic hemt. 6 Watt GaN HEMT 1 of 23 www.qorvo.com TGF2023-2-01 ® 6 W, 32 V, DC to 18 GHz, Discrete Power GaN on SiC HEMT Absolute Maximum Rat

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TGF2023-2-10 - 50 Watt Discrete Power GaN on SiC HEMT (TriQuint Semiconductor)

TGF2023-2-20 - 90 Watt Discrete Power GaN on SiC HEMT (TriQuint)

TGF2023-2-20 - SiC HEMT (Qorvo)

TGF2023-20 - 100 Watt Discrete Power GaN on SiC HEMT (TriQuint Semiconductor)

TGF2023-01 - 6 Watt Discrete Power GaN on SiC HEMT (TriQuint Semiconductor)

Stock and price

Qorvo

DC-18GHZ,6W DISCRETE PWR GAN/SIC

TGF2023-2-01

0 In Stock

Qty : 250 units

Unit Price : $28.12

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TGF2023-2-01 SiC HEMT Qorvo