Datasheet Specifications
- Part number
- TGF2023-2-01
- Manufacturer
- Qorvo
- File Size
- 3.42 MB
- Datasheet
- TGF2023-2-01-Qorvo.pdf
- Description
- SiC HEMT
Description
TGF2023-2-01 ® 6 W, 32 V, DC to 18 GHz, Discrete Power GaN on SiC HEMT Product Overview The Qorvo TGF2023-2-01 is a discrete 1.25 mm GaN on SiC HEMT .
Features
* advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2023-2-01 typically provides 37.7 dBm of saturated output power with power gain of 20.7 dB at 3 GHz. The maximum power added efficiency is 71.6 % which makes the TGF2023-2-01 apTGF2023-2-01 Distributors
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