Part number:
TGF2023-2-01
Manufacturer:
Qorvo
File Size:
3.42 MB
Description:
Sic hemt.
Datasheet Details
6 Watt GaN HEMT 1 of 23 www.qorvo.com TGF2023-2-01 ® 6 W, 32 V, DC to 18 GHz, Discrete Power GaN on SiC HEMT Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Drain to Gate Voltage (VDG) 100 V Drain Voltage (VD) Gate Voltage Range (VG) 40 V *7 to 2 V Drai
TGF2023-2-01 Features
* advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2023-2-01 typically provides 37.7 dBm of saturated output power with power gain of 20.7 dB at 3 GHz. The maximum power added efficiency is 71.6 % which makes the TGF2023-2-01 ap
Datasheet Details
TGF2023-2-01
Qorvo
3.42 MB
Sic hemt.
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