TGF2023-2-02 12 Watt Discrete Power GaN on SiC HEMT

TriQuint Semiconductor

Description

Applications * Defense & Aerospace * Broadband Wireless TGF2023-2-02 12 Watt Discrete Power GaN on SiC HEMT Product .
The TriQuint TGF2023-2-02 is a discrete 2.

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Datasheet Specifications

Part number: TGF2023-2-02
Manufacturer: TriQuint Semiconductor
File Size: 1.84 MB
Datasheet: TGF2023-2-02-TriQuintSemiconductor.pdf
Description: 12 Watt Discrete Power GaN on SiC HEMT

Features

* Frequency Range: DC - 18 GHz
* 40.1 dBm Nominal PSAT at 3 GHz
* 73.3% Maximum PAE
* 21 dB Nominal Power Gain at 3 GHz
* Bias: VD = 12 - 32 V, IDQ = 50 - 250 mA
* Technology: TQGaN25 on SiC
* Chip Dimensions: 0.82 x 0.92 x 0.10 mm Functional

Applications

* Defense & Aerospace

TGF2023-2-02 Distributors

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TGF2023-2-02 Watt Discrete Power GaN SiC HEMT TriQuint Semiconductor

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