TGF2023-2-02 Datasheet - TriQuint Semiconductor

TGF2023-2-02 12 Watt Discrete Power GaN on SiC HEMT

TGF2023-2-02 Features

* Frequency Range: DC - 18 GHz

* 40.1 dBm Nominal PSAT at 3 GHz

* 73.3% Maximum PAE

* 21 dB Nominal Power Gain at 3 GHz

* Bias: VD = 12 - 32 V, IDQ = 50 - 250 mA

* Technology: TQGaN25 on SiC

* Chip Dimensions: 0.82 x 0.92 x 0.10 mm Functional

Datasheet Details

TGF2023-2-02

TriQuint Semiconductor

1.84 MB

12 watt discrete power gan on sic hemt.

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