TGF2023-2-10 50 Watt Discrete Power GaN on SiC HEMT

TriQuint Semiconductor

Description

Applications * Defense & Aerospace * Broadband Wireless TGF2023-2-10 50 Watt Discrete Power GaN on SiC HEMT Product .
The TriQuint TGF2023-2-10 is a discrete 10 mm GaN on SiC HEMT which operates from DC-18 GHz.

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Datasheet Specifications

Part number: TGF2023-2-10
Manufacturer: TriQuint Semiconductor
File Size: 1.57 MB
Datasheet: TGF2023-2-10-TriQuintSemiconductor.pdf
Description: 50 Watt Discrete Power GaN on SiC HEMT

Features

* Frequency Range: DC - 18 GHz
* 47.3 dBm Nominal PSAT at 3 GHz
* 69.5% Maximum PAE
* 19.8 dB Nominal Power Gain at 3 GHz
* Bias: VD = 12 - 32 V, IDQ = 200 - 1000 mA
* Technology: TQGaN25 on SiC
* Chip Dimensions: 0.82 x 2.48 x 0.10 mm Functio

Applications

* Defense & Aerospace

TGF2023-2-10 Distributors

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TGF2023-2-10 Watt Discrete Power GaN SiC HEMT TriQuint Semiconductor

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