TGF2023-2-10 Datasheet - TriQuint Semiconductor

TGF2023-2-10 50 Watt Discrete Power GaN on SiC HEMT

TGF2023-2-10 Features

* Frequency Range: DC - 18 GHz

* 47.3 dBm Nominal PSAT at 3 GHz

* 69.5% Maximum PAE

* 19.8 dB Nominal Power Gain at 3 GHz

* Bias: VD = 12 - 32 V, IDQ = 200 - 1000 mA

* Technology: TQGaN25 on SiC

* Chip Dimensions: 0.82 x 2.48 x 0.10 mm Functio

Datasheet Details

TGF2023-2-10

TriQuint Semiconductor

1.57 MB

50 watt discrete power gan on sic hemt.

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