Datasheet Specifications
- Part number
- TGF2023-01
- Manufacturer
- TriQuint Semiconductor
- File Size
- 0.96 MB
- Datasheet
- TGF2023-01_TriQuintSemiconductor.pdf
- Description
- 6 Watt Discrete Power GaN on SiC HEMT
Description
TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT Key .
Features
* Frequency Range: DC - 18 GHz 38 dBm Nominal Psat at 3 GHz 66% Maximum PAE 18 dB Nominal Power Gain at 3 GHz Bias: Vd = 28 - 32 V, Idq = 125 mA, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions: 0.82 x 0.66TGF2023-01 Distributors
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