Datasheet Specifications
- Part number
- TGF2023-02
- Manufacturer
- TriQuint Semiconductor
- File Size
- 395.00 KB
- Datasheet
- TGF2023-02_TriQuintSemiconductor.pdf
- Description
- 12 Watt Discrete Power GaN on SiC HEMT
Description
TGF2023-02 12 Watt Discrete Power GaN on SiC HEMT Key .
Features
* Frequency Range: DC - 18 GHz 41 dBm Nominal Psat at 3 GHz 58% Maximum PAE 18 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 250 mA, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions: 0.82 x 0.92 x 0.10 mmApplications
* Bias conditions: Vd = 28 V, Idq = 250 mA, Vg = -3.6 V TypicalTGF2023-02 Distributors
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