TGF2023-02 Datasheet, Hemt, TriQuint Semiconductor

✔ TGF2023-02 Features

Frequency Range: DC - 18 GHz 41 dBm Nominal Psat at 3 GHz 58% Maximum PAE 18 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 250 mA, Vg = -3.6 V Typical T

✔ TGF2023-02 Application

Bias conditions: Vd = 28 V, Idq = 250 mA, Vg = -3.6 V Typical
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Part number:

TGF2023-02

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TriQuint Semiconductor

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📄 Datasheet

Description:

12 watt discrete power gan on sic hemt. The TriQuint TGF2023-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-02 is designed using TriQuint

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TGF2023-02 Watt Discrete Power GaN SiC HEMT TriQuint Semiconductor