TGF2023-10 Datasheet, Hemt, TriQuint Semiconductor

✔ TGF2023-10 Features

Frequency Range: DC - 18 GHz 46.7 dBm Nominal Psat at 3 GHz 55% Maximum PAE 17.5 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 1 A, Vg = -3.6 V Typical

✔ TGF2023-10 Application

www.DataSheet.net/ Defense & Aerospace Broadband Wireless Product Description Bias conditions: Vd = 28

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Part number:

TGF2023-10

Manufacturer:

TriQuint Semiconductor

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📄 Datasheet

Description:

50 watt discrete power gan on sic hemt. Bias conditions: Vd = 28 V, Idq = 1 A, Vg = -3.6 V Typical The TriQuint TGF2023-10 is a discrete 10 mm GaN on SiC HEMT which operate

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TGF2023-10 Watt Discrete Power GaN SiC HEMT TriQuint Semiconductor