TGF2023-10 50 Watt Discrete Power GaN on SiC HEMT

TriQuint Semiconductor

Description

TGF2023-10 50 Watt Discrete Power GaN on SiC HEMT Key .
Bias conditions: Vd = 28 V, Idq = 1 A, Vg = -3.

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Datasheet Specifications

Part number: TGF2023-10
Manufacturer: TriQuint Semiconductor
File Size: 407.52 KB
Datasheet: TGF2023-10_TriQuintSemiconductor.pdf
Description: 50 Watt Discrete Power GaN on SiC HEMT

Features

* Frequency Range: DC - 18 GHz 46.7 dBm Nominal Psat at 3 GHz 55% Maximum PAE 17.5 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 1 A, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions: 0.82 x 2.48 x 0.10 m

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TGF2023-10 Watt Discrete Power GaN SiC HEMT TriQuint Semiconductor

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