Datasheet4U Logo Datasheet4U.com

TGF2023-10 Datasheet - TriQuint Semiconductor

50 Watt Discrete Power GaN on SiC HEMT

TGF2023-10 Features

* Frequency Range: DC - 18 GHz 46.7 dBm Nominal Psat at 3 GHz 55% Maximum PAE 17.5 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 1 A, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions: 0.82 x 2.48 x 0.10 m

TGF2023-10 Datasheet (407.52 KB)

Preview of TGF2023-10 PDF

Datasheet Details

Part number:

TGF2023-10

Manufacturer:

TriQuint Semiconductor

File Size:

407.52 KB

Description:

50 watt discrete power gan on sic hemt.

📁 Related Datasheet

TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT (TriQuint Semiconductor)

TGF2023-02 12 Watt Discrete Power GaN on SiC HEMT (TriQuint Semiconductor)

TGF2023-05 25 Watt Discrete Power GaN on SiC HEMT (TriQuint Semiconductor)

TGF2023-2-01 SiC HEMT (Qorvo)

TGF2023-2-01 SiC HEMT (TriQuint Semiconductor)

TGF2023-2-02 12 Watt Discrete Power GaN on SiC HEMT (TriQuint Semiconductor)

TGF2023-2-05 25 Watt Discrete Power GaN on SiC HEMT (TriQuint Semiconductor)

TGF2023-2-10 50 Watt Discrete Power GaN on SiC HEMT (TriQuint Semiconductor)

TGF2023-2-20 90 Watt Discrete Power GaN on SiC HEMT (TriQuint)

TGF2023-2-20 SiC HEMT (Qorvo)

TAGS

TGF2023-10 Watt Discrete Power GaN SiC HEMT TriQuint Semiconductor

Image Gallery

TGF2023-10 Datasheet Preview Page 2 TGF2023-10 Datasheet Preview Page 3

TGF2023-10 Distributor