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TGF2023-05 Datasheet - TriQuint Semiconductor

25 Watt Discrete Power GaN on SiC HEMT

TGF2023-05 Features

* Frequency Range: DC - 18 GHz 43.9 dBm Nominal Psat at 3 GHz 56% Maximum PAE 17.8 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 500 mA, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions: 0.82 x 1.44 x 0.1

TGF2023-05 Datasheet (400.57 KB)

Preview of TGF2023-05 PDF

Datasheet Details

Part number:

TGF2023-05

Manufacturer:

TriQuint Semiconductor

File Size:

400.57 KB

Description:

25 watt discrete power gan on sic hemt.

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TGF2023-05 Watt Discrete Power GaN SiC HEMT TriQuint Semiconductor

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