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TGF2023-05 25 Watt Discrete Power GaN on SiC HEMT

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Description

TGF2023-05 25 Watt Discrete Power GaN on SiC HEMT Key .
Bias conditions: Vd = 28 V, Idq = 500 mA, Vg = -3.

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Datasheet Specifications

Part number
TGF2023-05
Manufacturer
TriQuint Semiconductor
File Size
400.57 KB
Datasheet
TGF2023-05_TriQuintSemiconductor.pdf
Description
25 Watt Discrete Power GaN on SiC HEMT

Features

* Frequency Range: DC - 18 GHz 43.9 dBm Nominal Psat at 3 GHz 56% Maximum PAE 17.8 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 500 mA, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions: 0.82 x 1.44 x 0.1

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