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Mitsubishi Electric
MGF4918E - (MGF4910E Series) Super Low Noise InGaAs HEMT
www.DataSheet4U.com ww.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U www.DataSheet4U.com 4U.com DataSheet 4 U .com www.DataSHeet4U.com www..
RFMD
SPF5189Z - GaAs pHEMT LOW NOISE MMIC AMPLIFIER
SPF5189Z 50MHz to 4000MHz, GaAs pHEMT Low Noise MMIC Amplifier SPF5189Z 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER Product Description Th.
Mitsubishi
MGF4916G - SUPER LOW NOISE InGaAs HEMT
MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF491xG series super-low-noise HEMT(High Electron Mob.
Mitsubishi
MGF4919G - SUPER LOW NOISE InGaAs HEMT
MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF491xG series super-low-noise HEMT(High Electron Mob.
Mitsubishi Electric
MGF4953A - SUPER LOW NOISE InGaAs HEMT
www.DataSheet4U.com June/2004 MITSUBISHI SEMICONDUCTOR
RF Micro Devices
SPF5122Z - GaAs pHEMT LOW NOISE MMIC AMPLIFIER
SPF5122Z 50MHz to 4000 MHz, GaAs pHEMT Low Noise MMIC Amplifier SPF5122Z 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER Product Description.
MACOM
CGHV14500F - GaN HEMT
CGHV14500F 500 W, DC - 1800 MHz, GaN HEMT for L-Band Radar Systems Description The CGHV14500 is a gallium nitride (GaN) high electron mobility transis.
CHEMTRONICS
CT1C08 - 8-CH CAPACITIVE TOUCH SENSOR
CHEMTRONICS – Digital Sensor Ver. 1.0 8-CH CAPACITIVE TOUCH SENSOR SPECIFICATIONS 1. REVISION HISTORY Rev 1.0 First Creation 2.0 Major Updated CON.
TriQuint Semiconductor
TGF2021-04-SD - DC-4 GHz Packaged Power pHEMT
TGF2021-04-SD DC-4 GHz Packaged Power pHEMT Key Features • • Frequency Range: DC-4 GHz Package Dimensions: 4.5 x 4 x 1.5 mm Nominal 900 MHz Low Noise .
TriQuint Semiconductor
TAT7457 - CATV 75 Ohm pHEMT Adjustable Gain RF Amplifier
TAT7457 CATV 75 Ω pHEMT Adjustable Gain RF Amplifier Applications Single-ended and Push-pull Optical Receivers Low-noise Drop Amplifiers Dis.
AVAGO
ATF-531P8 - High Linearity Enhancement Mode Pseudomorphic HEMT
ATF-531P8 High Linearity Enhancement Mode[1] Pseudomorphic HEMT in 2x2 mm2 LPCC[3] Package Data Sheet Description Avago Technologies’ ATF‑531P8 i.
RF Micro Devices
SUF-1000 - Cascadable pHEMT MMIC Amplifier
SUF-1000 Cascadable pHEMT MMIC Amplifier DC to 20GHz RFMD’s SUF-1000 is a monolithically matched high IP3 broadband pHemt MMIC amplifier. The self-bia.
Wolfspeed
CGHV27015S - GaN HEMT
CGHV27015S 15 W, DC - 6.0 GHz, 50 V, GaN HEMT Description Wolfspeed’s CGHV27015S is an unmatched, gallium nitride (GaN) high electron mobility transis.
MACOM
CGH40010 - RF Power GaN HEMT
CGH40010 10 W, DC - 6 GHz, RF Power GaN HEMT Description The CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT)..
MACOM
CGHV40050 - GaN HEMT
CGHV40050 50 W, DC - 4.0 GHz, 50 V, GaN HEMT Description The CGHV40050 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
MACOM
CGH40120F - RF Power GaN HEMT
CGH40120F 120 W, RF Power GaN HEMT Description The CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH4.
MACOM
CG2H40120 - 28V RF Power GaN HEMT
CG2H40120 120 W, 28 V, RF Power GaN HEMT Description The CG2H40120 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). Th.
MACOM
CGH40180PP - 180W RF Power GaN HEMT
CGH40180PP 180 W, RF Power GaN HEMT Description The CGH40180PP is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG.
MACOM
CGHV27030S - GaN HEMT
CGHV27030S 30 W, DC - 6.0 GHz, GaN HEMT Description The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) whi.
MACOM
CGH40035F - RF Power GaN HEMT
CGH40035F 35 W, DC - 4 GHz, RF Power GaN HEMT Description The CGH40035F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT.
