HEMT Datasheet | Specifications & PDF Download

MwT-PH7F 28 GHz Medium Power AlGaAs/InGaAs pHEMT Features: • 24.5 dBm of Power at 18 GHz • 15 dB typical Small Signal Gain at 18 GHz • 45% typical P

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Preliminary GaAs PHEMT Switchable Gain LNA AL108-338 Features ■ For 3.2–3.8 GHz Fixed Wireless Applications ■ Adjustable Gain ■ +7 dBm Output Power ■

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CGH27030S 30 W, DC - 6.0 GHz, 28 V, GaN HEMT Description Wolfspeed’s CGH27030S is an unmatched, gallium nitride (GaN) high electron mobility transist

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CHEMTRONICS – Digital Sensor Ver. 1.0 8-CH CAPACITIVE TOUCH SENSOR SPECIFICATIONS 1. REVISION HISTORY Rev 1.0 First Creation 2.0 Major Updated CON

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PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH4

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GTRA184602FC Thermally-Enhanced High Power RF GaN on SiC HEMT 460 W, 48 V, 1805 – 1880 MHz Description The GTRA184602FC is a 460-watt (P3dB) GaN on Si

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CGHV40100 100 W, DC - 3.0 GHz, 50 V, GaN HEMT Description Wolfspeed's CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transist

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GTVA126001EC/FC Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC – 1.4 GHz Description The GTVA126001EC and GTVA126001FC are 600-watt GaN on

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CHEMTRONICS – Digital Sensor Ver. 1.0 8-CH CAPACITIVE TOUCH SENSOR SPECIFICATIONS 1. REVISION HISTORY Rev 1.0 First Creation 2.0 Major Updated CON

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CGHV40100 100 W, DC - 3.0 GHz, 50 V, GaN HEMT Cree’s CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG

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CGH40006P 6 W, RF Power GaN HEMT Description The CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH400

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GTRB424908FC/1 Thermally-Enhanced High Power RF GaN on SiC HEMT 450 W, 48 V, 3700 – 4000 MHz Description The GTRB424908FC/1 is a 450-watt (P3dB) GaN o

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CFH800 Data Sheet Low-Noise, High-Linearity Packaged pHEMT FET Product Description The CFH800 is a high-linearity pHEMT FET that exhibits both a high

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PRELIMINARY CGH27015F 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride (GaN) high electron mobility transistor desig

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CGHV40030 30 W, DC - 6 GHz, 50 V, GaN HEMT Description Wolfspeed’s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor

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CGH35060F2/P2 60 W, 3.1 - 3.5 GHz, 28 V, GaN HEMT Description Wolfspeed’s CGH35060F2/P2 is a gallium nitride (GaN) high electron mobility transistor (

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GTVA261701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz Description The GTVA261701FA is a 170-watt (P3dB) GaN on Si

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KX105 15 W, 6.0 GHz, GaN HEMT Transistor DESCRIPTION The KX105 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) transistor in a Su

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SPF-3143Z Product Description Sirenza Microdevices’ SPF-3143Z is a high performance 0.5μm pHEMT Gallium Arsenide FET. This 600μm device is ideally bia

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