HEMT Datasheet | Specifications & PDF Download

SPF5189Z 50MHz to 4000MHz, GaAs pHEMT Low Noise MMIC Amplifier SPF5189Z 50MHz to 4000MHz, GaAs pHEMT LOW NOISE MMIC AMPLIFIER Product Description Th

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GTRA364002FC Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 – 3600 MHz Description The GTRA364002FC is a 400-watt (PSAT) GaN on S

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LINEAR & POWER AMPLIFIERS - SMT HMC441LP3 / 441LP3E v05.0812 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Typical Applications The HMC44

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Preliminary Data Sheet 1.0 FMS2002QFN ES1 SP3T Reflective pHEMT MMIC Switch Description The FMS2002QFN is a linear high power Single-Pole Three-Thr

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CGHV14800 800 W, 960 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems Description Wolfspeed’s CGHV14800 is a gallium nitride (GaN) high electron mo

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GGaiainn((ddBB)) EffEiffciicieennccyy((%%)) GTVA126001EC/FC Thermally-Enhanced High Power RF GaN HEMT 600 W, 50 V, DC – 1.4 GHz Description The GTVA1

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CGHV35120F 120 W, 2.9 - 3.8 GHz, 50 V, GaN HEMT for S-Band Radar Systems Description The CGHV35120F is a gallium nitride (GaN) high electron mobility

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GTRB266908FC Thermally-Enhanced High Power RF GaN on SiC HEMT 630 W, 48 V, 2515 – 2675 MHz Description The GTRB266908FC is a 630-watt (P4dB) GaN on Si

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LINEAR & POWER AMPLIFIERS - SMT HMC441LP3 / 441LP3E v05.0812 GaAs pHEMT MMIC MEDIUM POWER AMPLIFIER, 6.5 - 13.5 GHz Typical Applications The HMC44

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CHEMTRONICS – Digital Sensor Ver. 1.0 8-CH CAPACITIVE TOUCH SENSOR SPECIFICATIONS 1. REVISION HISTORY Rev 1.0 First Creation 2.0 Major Updated CON

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CHEMTRONICS – Digital Sensor Ver. 1.0 8-CH CAPACITIVE TOUCH SENSOR SPECIFICATIONS 1. REVISION HISTORY Rev 1.0 First Creation 2.0 Major Updated CON

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GaAs Pseudomorphic HEMT and MESFET Chips August 2006 - Rev 03-Aug-06 CF004 Series Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel

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www.DataSheet.net/ Datasheet pdf - http://www.DataSheet4U.co.kr/ www.DataSheet.net/ Datasheet pdf - http://www.DataSheet4U.co.kr/ www.DataSheet.ne

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data sheet AS200-313LF: PHEMT GaAs IC 2 W High-Linearity 5–6 GHz T/R Switch Applications l Simplified Block Diagram J2 CBL T/R switch in WLAN 802.1

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AMPLIFIERS -LOW NOISE -SMT HMC373LP3 / 373LP3E v04.1119 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz Typical Applications The

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HMC995LP5GE V02.1112 GaAs pHEMT MMIC 3 WATT POWER AMPLIFIER SMT WITH POWER DETECTOR, 12 - 16 GHz Amplifiers - Linear & Power - SMT Typical Applicati

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CGHV1F006S 6 W, DC - 15 GHz, 40 V, GaN HEMT Description Wolfspeed’s CGHV1F006S is an unmatched, gallium nitride (GaN) high electron mobility transisto

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CGH27030 30 W, 28 V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Description Wolfspeed's CGH27030 is a gallium nitride (GaN) high ele

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CG2H30070F 70 W, DC - 4.0 GHz, 28 V, RF Power GaN HEMT Description The CG2H30070F is an internally matched gallium nitride (GaN) high electron mobilit

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MwT-PH11F/MwT-PH11FV 12 GHz High Power AlGaAs/InGaAs pHEMT Features: • 33 dBm of Power at 12 GHz • 12 dB Small Signal Gain at 12 GHz • 45% PAE at 12

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